TPCC8002-H 2009-07-15 1 toshiba field effect transistor silicon n-chan nel mos type (u-mos -h) TPCC8002-H high-efficiency dc-dc converter applications notebook pc applications portable equipment applications ? small footprint due to a small and thin package ? high-speed switching ? small gate charge: q sw = 7.1 nc (typ.) ? low drain-source on-resistance: r ds (on) = 7.6 m (typ.) ( v gs = 4.5 v) ? high forward transfer admittance: |y fs | = 65 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.5 to 2.5 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 30 v drain-gate voltage (r gs = 20 k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 22 drain current pulsed (note 1) i dp 66 a drain power dissipation (tc = 25 ) p d 30 w drain power dissipation (t = 10 s) (note 2a) p d 1.9 w drain power dissipation (t = 10 s) (note 2b) p d 0.7 w single-pulse avalanche energy (note 3) e as 126 mj avalanche current i ar 22 a repetitive avalanche energy (tc = 25 ) (note 4) e ar 2.1 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 4, refer to the next page. using continuously under heavy lo ads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita ? toshiba 2-3x1a weight: 0.02 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,6,7,8:drain
TPCC8002-H 2009-07-15 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to case (tc = 25 ) r th (ch-c) 4.2 c/w thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 66 c/w thermal resistance, channel to ambient (t = 10 s) (note 2b) r th (ch-a) 180 c/w marking (note 5) note 1: ensure that the channel temperature does not exceed 150c. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 200 h, r g = 25 , i ar = 22 a note 4: repetitive rating: pulse width limited by maximum channel temperature note 5: * weekly code: (three digits) week of manufacture (01 for the first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the year) (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) part number 8002h lot no. product-specific code
TPCC8002-H 2009-07-15 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cutoff current i dss v ds = 30 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 15 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.5 ? 2.5 v v gs = 4.5 v, i d = 11 a ? 7.6 10.6 drain-source on-resistance r ds (on) v gs = 10 v, i d = 11 a ? 5.5 8.3 m forward transfer admittance |y fs | v ds = 10 v, i d = 11 a 33 65 ? s input capacitance c iss ? 1900 2500 reverse transfer capacitance c rss ? 110 170 output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 400 ? pf gate resistance rg v ds = 10 v, v gs = 0 v, f = 5 mhz ? 3.2 4.8 rise time t r ? 2.8 ? turn-on time t on ? 9.8 ? fall time t f ? 5.9 ? switching time turn-off time t off duty 1%, t w = 10 s ? 27 ? ns v dd 24 v, v gs = 10 v, i d = 22 a ? 27 ? total gate charge (gate-source plus gate-drain) q g v dd 24 v, v gs = 5 v, i d = 22 a ? 14.3 ? gate-source charge 1 q gs1 ? 6.8 ? gate-drain (?miller?) charge q gd ? 4.3 ? gate switch charge q sw v dd 24 v, v gs = 10 v, i d = 22 a ? 7.1 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 66 a forward voltage (diode) v dsf i dr = 22 a, v gs = 0 v ? ? ? 1.2 v r l = 1.36 v dd 15 v 0 v v gs 10 v 4.7 i d = 11 a v out
TPCC8002-H 2009-07-15 4 i d ? v ds 2 40 30 20 10 0 50 0 0.8 v gs = 2.7 v 1.6 1.2 0.4 3.2 3.6 3.4 3 4.5 6 5 10 8 4 1 0.1 10 100 100 10 v gs = 4.5 v 1 10 10 100 0.1 1 25 100 ta = ? 55c 100 1 1000 10 0.1 0 0.3 0 i d = 22 a 2 4 8 5.5 11 0.2 10 0.4 6 0.1 0 0 1 23 5 50 ta = ? 55c 25 100 30 4 10 40 20 i d ? v ds 20 12 8 0 16 4 0 0.2 0.4 0.6 0.8 v gs = 2.7 v 2.9 3.2 10 1 4.5 4 3 6 3.3 3.1 8 5 drain-source voltage v ds (v) drain current i d (a) drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ) drain current i d (a) ? y fs ? ? i d forward transfer admittance |y fs | (s) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs common source ta = 25c pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test common source ta = 25c pulse test common source ta = 25c pulse test common source v ds = 10 v pulse test
TPCC8002-H 2009-07-15 5 10 20 0 0 30 v dd = 6 v v ds 24 12 12 4 0 6 8 12 30 24 18 0 0.5 1.5 ? 80 ? 40 0 40 80 120 160 2.5 1.0 2.0 10 0.1 100 1000 10000 1 10 100 c iss c oss c rss 0 1 ? 0.2 100 ? 0.6 ? 0.8 ? 1.0 v gs = 0 v 10 4.5 3 ? 0.4 10 1 160 ? 40 0 40 80 120 ? 80 6 0 v gs = 10 v v gs = 4.5 v 14 12 i d = 5.5, 11, 22 a i d = 22 a 5.5, 11 a 8 4 10 2 drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature ta ( c) v th ? ta ambient temperature ta ( c) r ds (on) ? ta drain-source on-resistance r ds (on) (m ) total gate charge q g (nc) drain-source voltage v ds (v) dynamic input/output characteristics gate-source voltage v gs (v) common source ta = 25c pulse test common source v gs = 0 v f = 1 mhz ta = 25c common source v ds = 10 v i d = 1 ma pulse test common source pulse test common source i d = 22 a ta = 25c pulse test
TPCC8002-H 2009-07-15 6 t =1 ms* v dss max t =10 ms* 10 1000 0.1 10 1 1 100 0.1 100 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 (2) (1) (3) 0.01 0.1 0.0001 2.0 0 1.5 2.5 1.0 0.5 0 40 80 120 160 (1) (2) transient thermal impedance r th (c/w) pulse width t w (s) r th ? t w (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) (3) tc = 25 single - pulse drain current i d (a) drain-source voltage v ds (v) safe operating area i d max (pulse) * * single-pulse ta = 25 curves must be derated linearly with increase in temperature. case temperature t c ( c) p d ? tc drain power dissipation p d (w) ambient temperature ta ( c) p d ? ta drain power dissipation p d (w) (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) t = 10 s 30 20 10 0 0 40 80 120 160 40
TPCC8002-H 2009-07-15 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? 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